参数项参数值
参数项参数值
Forward Transconductance - Min7 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Id - Continuous Drain Current5.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance19.5 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time100 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge15.2 nC
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541290000
Factory Pack Quantity3000
BrandROHM Semiconductor
Channel ModeEnhancement
Product TypeMOSFET
DescriptionMOSFET Pch -20V -5.5A Si MOSFET
ManufacturerROHM Semiconductor
TARIC8541290000
ImageROHM Semiconductor RF6C055BCTCR
Product CategoryMOSFET
Fall Time70 ns
RoHS Details
Unit Weight0.000265 oz
SubcategoryMOSFETs
Part # AliasesRF6C055BC
Pd - Power Dissipation1 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time34 ns