参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage5 V
TechnologySi
Id - Continuous Drain Current18 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time26 ns
Rds On - Drain-Source Resistance286 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time50 ns
Qg - Gate Charge42 nC
Package / CaseTO-263-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time12 ns
PackagingCut Tape
PackagingReel
TARIC8541290000
SeriesBM14270MUV-LB
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor R6018JNJGTL
Product CategoryMOSFET
Factory Pack Quantity1000
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation220 W
USHTS8541290095
DescriptionMOSFET 600V N-CH 18A POWER
Vds - Drain-Source Breakdown Voltage600 V
TradenamePrestoMOS
Number of Channels1 Channel
Rise Time20 ns
Moisture Sensitivity Level1 (Unlimited)