参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current40 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time25 ns
Rds On - Drain-Source Resistance19 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time205 ns
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge90 nC
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageROHM Semiconductor RSJ400N10TL
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Channel ModeEnhancement
Fall Time250 ns
SeriesRSJ400N10
Factory Pack Quantity1000
SubcategoryMOSFETs
Product CategoryMOSFET
BrandROHM Semiconductor
Product TypeMOSFET
Unit Weight0.068654 oz
DescriptionMOSFET 4V Drive Nch MOSFET
ManufacturerROHM Semiconductor
USHTS8541290095
Part # AliasesRSJ400N10
Pd - Power Dissipation50 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time80 ns
Moisture Sensitivity Level1 (Unlimited)