参数项参数值
参数项参数值
Forward Transconductance - Min7 S, 7 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Id - Continuous Drain Current9 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time20 ns, 20 ns
Rds On - Drain-Source Resistance12.5 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time50 ns, 50 ns
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseTSMT-8
Qg - Gate Charge12 nC
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
ImageROHM Semiconductor QH8KA4TCR
PackagingCut Tape
PackagingMouseReel
PackagingReel
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time20 ns, 20 ns
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Unit Weight0.017231 oz
Factory Pack Quantity3000
Product CategoryMOSFET
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET 30V Nch+Nch Si MOSFET
Part # AliasesQH8KA4
Pd - Power Dissipation1.5 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time20 ns, 20 ns
Moisture Sensitivity Level1 (Unlimited)