在线商城 
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min4 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current15 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time30 ns
Rds On - Drain-Source Resistance260 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time50 ns
MXHTS85412999
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge27.5 nC
Package / CaseTO-263-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time15 ns
TARIC8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
BrandROHM Semiconductor
SeriesSuper Junction-MOS KN
RoHS Details
ImageROHM Semiconductor R6015KNJTL
Unit Weight0.077603 oz
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity1000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation184 W
Part # AliasesR6015KNJ
USHTS8541290095
DescriptionMOSFET Nch 600V 15A Si MOSFET
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time30 ns