参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Id - Continuous Drain Current200 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time5 ns
Rds On - Drain-Source Resistance2.2 Ohms
Transistor Type1 N-Channel MOSFET
Typical Turn-Off Delay Time17 ns
MXHTS85412999
KRHTS8541219000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Qg - Gate Charge-
Package / CaseSOT-416-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageROHM Semiconductor RE1J002YNTCL
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity3000
Fall Time43 ns
SubcategoryMOSFETs
Product CategoryMOSFET
BrandROHM Semiconductor
Unit Weight0.000212 oz
ManufacturerROHM Semiconductor
DescriptionMOSFET Small Signal MOSFET N-CH .9V Drive .2A
Product TypeMOSFET
USHTS8541210095
Part # AliasesRE1J002YN
Pd - Power Dissipation150 mW
Vds - Drain-Source Breakdown Voltage50 V
Number of Channels1 Channel
Rise Time8 ns
Moisture Sensitivity Level1 (Unlimited)