参数项参数值
参数项参数值
Forward Transconductance - Min7.5 s
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current6 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance16 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time400 ns
MXHTS85412999
Qg - Gate Charge34 nC
KRHTS8541299000
Package / CaseTSMT-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541290000
Channel ModeEnhancement
Fall Time230 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageROHM Semiconductor RQ1A060ZPTR
BrandROHM Semiconductor
Pd - Power Dissipation1.5 W
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Part # AliasesRQ1A060ZP
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage12 V
USHTS8541290095
Number of Channels1 Channel
Rise Time105 ns