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商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min3.8 S
TechnologySiC
Vgs th - Gate-Source Threshold Voltage2.7 V
Transistor PolarityN-Channel
Id - Continuous Drain Current30 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 4 V, + 22 V
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Typical Turn-On Delay Time16 ns
Rds On - Drain-Source Resistance80 mOhms
Transistor Type1 N-Channel
Maximum Operating Temperature+ 175 C
Typical Turn-Off Delay Time27 ns
ImageROHM Semiconductor SCT3080ALGC11
Package / CaseTO-247-3
PackagingTube
BrandROHM Semiconductor
SubcategoryMOSFETs
Mounting StyleThrough Hole
TARIC8541290000
Product CategoryMOSFET
DescriptionMOSFET N-Ch 650V 30A Silicon Carbide SiC
ManufacturerROHM Semiconductor
Factory Pack Quantity450
Qg - Gate Charge48 nC
RoHS Details
MXHTS85412999
SeriesSCT3x
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Fall Time16 ns
Unit Weight0.211644 oz
CNHTS8541290000
Part # AliasesSCT3080AL
Pd - Power Dissipation134 W
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel
Rise Time26 ns