参数项参数值
参数项参数值
DC Current Gain hFE Max270 at 100 mA, 2 V
Gain Bandwidth Product fT300 MHz, 280 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max30 V
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO6 V
Width1.6 mm
Collector-Emitter Saturation Voltage140 mV, - 200 mV
Height0.85 mm
DC Collector/Base Gain hfe Min270 at 100 mA, 2 V
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor QSZ2TR
RoHS Details
SubcategoryTransistors
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
SeriesQSZ2
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity3000
USHTS8541290095
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT TRANS GP BJT NPN PNP 30V 1.5A 5PIN
Pd - Power Dissipation1.25 W
Part # AliasesQSZ2
Moisture Sensitivity Level1 (Unlimited)