RQ3E150GNTB

厂牌：ROHM

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000044473555

描述：MOSFET N-CH 30V 39A HSMT-8; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:17W; Transistor Case Style:HSMT; No. of Pins:8Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

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商品参数

参数项参数值

PackagingTape & Reel (TR)

Package / Case8-PowerVDFN

Mounting TypeSurface Mount

Operating Temperature150°C (TJ)

TechnologyMOSFET (Metal Oxide)

FET TypeN-Channel

Current - Continuous Drain (Id) @ 25°C15A (Ta), 39A (Tc)

Rds On (Max) @ Id, Vgs6.1mOhm @ 15A, 10V

FET Feature-

Power Dissipation (Max)2W (Ta), 17W (Tc)

Vgs(th) (Max) @ Id2.5V @ 1mA

Supplier Device Package8-HSMT (3.2x3)

Grade-

Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

Vgs (Max)±20V

Drain to Source Voltage (Vdss)30 V

Gate Charge (Qg) (Max) @ Vgs15.3 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds850 pF @ 15 V

Qualification-

Moisture Sensitivity Level1 (Unlimited)