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商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time25 ns
Rds On - Drain-Source Resistance570 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time70 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge20 nC
Mounting StyleSMD/SMT
Package / CaseTO-263-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity1000
CNHTS8541290000
BrandROHM Semiconductor
SeriesSuper Junction-MOS EN
Channel ModeEnhancement
ManufacturerROHM Semiconductor
TARIC8541290000
Product CategoryMOSFET
DescriptionMOSFET 10V Drive Nch MOSFET
ImageROHM Semiconductor R6007ENJTL
Fall Time35 ns
RoHS Details
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.077603 oz
Part # AliasesR6007ENJ
USHTS8541290095
Pd - Power Dissipation78 W
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time25 ns