在线商城 
RQ6E085BNTCR
厂牌：ROHM
包装：REEL 3000
类目：元器件 > 分立器件 > MOSFET
编号：B000044473656
描述：MOSFET N-CH 30V 8.5A 150DEG C 1.25W
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min8 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current8.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time11 ns
Rds On - Drain-Source Resistance11.1 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time70 ns
Qg - Gate Charge32.7 nC
Package / CaseSOT-457-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time31 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
RoHS Details
BrandROHM Semiconductor
ImageROHM Semiconductor RQ6E085BNTCR
SubcategoryMOSFETs
Product CategoryMOSFET
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1.25 W
Part # AliasesRQ6E085BN
DescriptionMOSFET Nch 30V 8.5A Si MOSFET
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time16 ns