参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current18 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time26 ns
Rds On - Drain-Source Resistance5.4 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time295 ns
CNHTS8541290000
Qg - Gate Charge160 nC
Package / CaseSOP-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time245 ns
TARIC8541290000
PackagingCut Tape
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RS3E180ATTB1
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity2500
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation2 W
USHTS8541290095
DescriptionMOSFET -30V P-CHANNEL -18A
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time49 ns
Moisture Sensitivity Level1 (Unlimited)