参数项参数值
参数项参数值
Forward Transconductance - Min1.7 S, 1.7 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current4.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5 ns, 5 ns
Rds On - Drain-Source Resistance56 mOhms, 56 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time10 ns, 10 ns
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseTSMT-8
Qg - Gate Charge3 nC
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
ImageROHM Semiconductor QH8KA1TCR
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
Channel ModeEnhancement
SubcategoryMOSFETs
BrandROHM Semiconductor
Fall Time3.5 ns, 3.5 ns
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product CategoryMOSFET
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET 30V Nch+Nch Si MOSFET
Part # AliasesQH8KA1
Pd - Power Dissipation2.4 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time7.5 ns, 7.5 ns