参数项参数值
参数项参数值
PackagingCut Tape (CT)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs4.5mOhm @ 18A, 4.5V
FET Feature-
Power Dissipation (Max)2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id1.5V @ 11mA
Supplier Device Package8-HSMT (3.2x3)
Grade-
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds4290 pF @ 15 V
Qualification-
Moisture Sensitivity Level1 (Unlimited)