参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current22 A
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time45 ns
Rds On - Drain-Source Resistance105 mOhms
Transistor Type1 N-Channel
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge60 nC
Mounting StyleSMD/SMT
Package / CaseTO-263-3
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Factory Pack Quantity1000
CNHTS8541290000
BrandROHM Semiconductor
SeriesRCJ220N25
Product TypeMOSFET
DescriptionMOSFET 10V Drive Nch Power MOSFET
Channel ModeEnhancement
ImageROHM Semiconductor RCJ220N25TL
TARIC8541290000
ManufacturerROHM Semiconductor
Fall Time40 ns
Product CategoryMOSFET
RoHS Details
Unit Weight0.077603 oz
SubcategoryMOSFETs
Part # AliasesRCJ220N25
Pd - Power Dissipation166 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage250 V
Number of Channels1 Channel
Rise Time100 ns