参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Id - Continuous Drain Current150 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time3 ns
Rds On - Drain-Source Resistance5.4 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time12 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge-
Mounting StyleSMD/SMT
Package / CaseDFN-0604-3
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
ProductMOSFETs
CNHTS8541210000
Factory Pack Quantity8000
BrandROHM Semiconductor
SeriesRVxC
Product TypeMOSFET
Channel ModeEnhancement
DescriptionMOSFET 20V Vdss 2ohm Rds on Id +/-150mA N-Ch
ManufacturerROHM Semiconductor
ImageROHM Semiconductor RV3C002UNT2CL
TARIC8541290000
Product CategoryMOSFET
Fall Time25 ns
RoHS Details
Unit Weight0.013785 oz
SubcategoryMOSFETs
Part # AliasesRV3C002UN
Pd - Power Dissipation100 mW
USHTS8541290095
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time4 ns
TypeSmall Signal MOSFET
Moisture Sensitivity Level1 (Unlimited)