参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current80 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time31 ns
Width3 mm
Rds On - Drain-Source Resistance1.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time160 ns
Height0.9 mm
Length3.2 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge94 nC
Package / CaseHSOP-8
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
ImageROHM Semiconductor RS1E280BNTB
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time28 ns
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Factory Pack Quantity2500
Product CategoryMOSFET
Unit Weight0.013466 oz
Product TypeMOSFET
USHTS8541290095
DescriptionMOSFET 4.5V Drive Nch MOSFET
Pd - Power Dissipation30 W
Part # AliasesRS1E280BN
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time100 ns