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R6047ENZ4C13

R6047ENZ4C13

厂牌：ROHM
包装：TUBE 600
类目：元器件 > 分立器件 > MOSFET
编号：B000044473912
描述：MOSFET N-CH 600V 47A 150DEG C 481W; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.066ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:481W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
最新价格近期成交19单+
数量价格（含税）
1¥102.9060
100¥70.8485
500¥64.1882
600¥53.4291
1200¥49.4768
3000¥42.7434
6000¥40.1084
库存：600交期：5-10个工作日起订：30增量：1
数量：
X
102.9060（单价）
合计：
￥3087.18
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current47 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time50 ns
Rds On - Drain-Source Resistance72 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time260 ns
Qg - Gate Charge145 nC
Package / CaseTO-247-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time100 ns
TARIC8541290000
PackagingTube
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor R6047ENZ4C13
Unit Weight0.537125 oz
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity30
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation481 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time100 ns