参数项参数值
参数项参数值
ConfigurationSingle
ImageROHM Semiconductor SCT3017ALHRC11
DescriptionMOSFET 650V 118A 427W SIC 17mOhm TO-247N
Forward Transconductance - Min16 s
Vgs th - Gate-Source Threshold Voltage2.7 V
TechnologySiC
Transistor PolarityN-Channel
Id - Continuous Drain Current118 A
Vgs - Gate-Source Voltage- 4 V, + 22 V
QualificationAEC-Q101
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time30 ns
Rds On - Drain-Source Resistance17 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time64 ns
PackagingTube
Package / CaseTO-247-3
Product CategoryMOSFET
Factory Pack Quantity30
Maximum Operating Temperature+ 175 C
Mounting StyleThrough Hole
Product TypeMOSFET
BrandROHM Semiconductor
RoHS Details
ManufacturerROHM Semiconductor
Qg - Gate Charge172 nC
SeriesSCT3x
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time31 ns
Unit Weight0.521129 oz
Pd - Power Dissipation427 W
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel
Rise Time44 ns