参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time35 ns
Rds On - Drain-Source Resistance170 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time150 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge60 nC
Package / CaseTO-263-3
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time67 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
ImageROHM Semiconductor R6020ENJTL
RoHS Details
Unit Weight0.077603 oz
SeriesSuper Junction-MOS EN
Factory Pack Quantity1000
Product TypeMOSFET
Pd - Power Dissipation231 W
BrandROHM Semiconductor
Part # AliasesR6020ENJ
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET 10V Drive Nch MOSFET
ManufacturerROHM Semiconductor
Vds - Drain-Source Breakdown Voltage600 V
USHTS8541290095
Number of Channels1 Channel
Rise Time53 ns