参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8 ns
Width1.65 mm
Rds On - Drain-Source Resistance280 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time35 ns
Height1 mm
MXHTS85412999
Length2.9 mm
KRHTS8541299000
Qg - Gate Charge9.5 nC
JPHTS8541290100
CAHTS8541290000
Package / CaseSOT-346-3
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ProductMOSFET
PackagingCut Tape
PackagingReel
TARIC8541290000
RoHS Details
ImageROHM Semiconductor RQ5H020SPTL
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time10 ns
BrandROHM Semiconductor
Factory Pack Quantity3000
Unit Weight0.000423 oz
Product CategoryMOSFET
Product TypeMOSFET
ManufacturerROHM Semiconductor
DescriptionMOSFET Pch -45V -2.0A Power MOSFET
USHTS8541290095
Pd - Power Dissipation1 W
Part # AliasesRQ5H020SP
Vds - Drain-Source Breakdown Voltage45 V
Number of Channels1 Channel
Rise Time10 ns
TypePower MOSFET