参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current10 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time29 ns
Rds On - Drain-Source Resistance245 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time40 ns
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge26.5 nC
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageROHM Semiconductor RCJ100N25TL
TARIC8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
RoHS Details
Channel ModeEnhancement
Fall Time16 ns
SeriesRCJ100N25
SubcategoryMOSFETs
Factory Pack Quantity1000
Product CategoryMOSFET
BrandROHM Semiconductor
Unit Weight0.077603 oz
Product TypeMOSFET
ManufacturerROHM Semiconductor
DescriptionMOSFET 10V Drive Nch MOSFET
USHTS8541290095
Part # AliasesRCJ100N25
Pd - Power Dissipation85 W
Vds - Drain-Source Breakdown Voltage250 V
Number of Channels1 Channel
Rise Time40 ns