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商品参数
参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Id - Continuous Drain Current2 A, 1.5 A
Transistor PolarityN-Channel, P-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance325 mOhms
Transistor Type1 N-Channel, 1 P-Channel
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge4.7 nC, 17 nC
Package / CaseTSMT-8
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor QS8M51TR
SubcategoryMOSFETs
Channel ModeEnhancement
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
SeriesQS8M51
Product CategoryMOSFET
Unit Weight0.001772 oz
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET 4V Drive Nch + Pch MOSFET
Part # AliasesQS8M51
Pd - Power Dissipation1.5 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels2 Channel
Moisture Sensitivity Level1 (Unlimited)