参数项参数值
参数项参数值
Forward Transconductance - Min3 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Id - Continuous Drain Current3.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
ComplianceSingle
QualificationAEC-Q101
Typical Turn-On Delay Time8 ns
Rds On - Drain-Source Resistance54 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time29 ns
Qg - Gate Charge4.6 nC
Package / CaseSC-95-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time13 ns
TARIC8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RTQ035N03HZGTR
Product CategoryMOSFET
Unit Weight0.034463 oz
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation1.25 W
USHTS8541290095
DescriptionMOSFET 30V N-CHANNEL 3.5A
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time12 ns