参数项参数值
参数项参数值
Forward Transconductance - Min10.8 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.7 V
TechnologySiC
Id - Continuous Drain Current72 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 4 V, + 22 V
Typical Turn-On Delay Time24 ns
Rds On - Drain-Source Resistance30 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time61 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge131 nC
Package / CaseTO-247-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
PackagingTube
CNHTS8541290000
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Product TypeMOSFET
SeriesSCT3x
Factory Pack Quantity450
TARIC8541290000
Product CategoryMOSFET
Channel ModeEnhancement
RoHS Details
Fall Time29 ns
DescriptionMOSFET N-Ch 1200V SiC 72A 30mOhm TrenchMOS
ImageROHM Semiconductor SCT3030KLGC11
SubcategoryMOSFETs
Unit Weight0.211644 oz
USHTS8541290095
Part # AliasesSCT3030KL
Pd - Power Dissipation339 W
Vds - Drain-Source Breakdown Voltage1.2 kV
Number of Channels1 Channel
Rise Time42 ns
Moisture Sensitivity Level1 (Unlimited)