参数项参数值
参数项参数值
Forward Transconductance - Min0.3 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current1.4 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time3.1 ns
Rds On - Drain-Source Resistance700 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time23 ns
Qg - Gate Charge-
Package / CaseDFN-1006-3
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
ProductMOSFETs
PackagingReel
PackagingCut Tape
PackagingMouseReel
RoHS Details
ImageROHM Semiconductor RV2C014BCT2CL
Channel ModeEnhancement
SeriesRVxC
SubcategoryMOSFETs
Fall Time3.1 ns
BrandROHM Semiconductor
Factory Pack Quantity8000
Unit Weight0.000912 oz
Product TypeMOSFET
Product CategoryMOSFET
DescriptionMOSFET P-Chnl -20V Vdss -/+1.4A Id RASMID
ManufacturerROHM Semiconductor
Pd - Power Dissipation600 mW
Part # AliasesRV2C014BC
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time12 ns
TypeSmall Signal MOSFET