参数项参数值
参数项参数值
Forward Transconductance - Min2 s
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Id - Continuous Drain Current2.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
QualificationAEC-Q101
Typical Turn-On Delay Time9 ns
Rds On - Drain-Source Resistance130 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Qg - Gate Charge3.2 nC
Package / CaseSC-96-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time14 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RTR025N05HZGTL
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1 W
DescriptionMOSFET 45V N-CHANNEL 2A
Vds - Drain-Source Breakdown Voltage45 V
Number of Channels1 Channel
Rise Time15 ns