参数项参数值
参数项参数值
Forward Transconductance - Min2 s
ConfigurationDual
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance75 mOhms
Transistor Type2 P-Channel
Typical Turn-Off Delay Time65 ns
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge6.5 nC
Package / CaseSOT-457-6
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541290000
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor QS6J11TR
Channel ModeEnhancement
SubcategoryMOSFETs
BrandROHM Semiconductor
Fall Time35 ns
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeMOSFET
SeriesQS6J11
USHTS8541290095
Product CategoryMOSFET
DescriptionMOSFET TRANS MOSFET PCH 12V 2A 6PIN
Part # AliasesQS6J11
Pd - Power Dissipation600 mW
Vds - Drain-Source Breakdown Voltage12 V
Number of Channels2 Channel
Rise Time17 ns