参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage5 V
TechnologySi
Id - Continuous Drain Current12 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time23 ns
Rds On - Drain-Source Resistance390 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time44 ns
Qg - Gate Charge28 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time15 ns
PackagingTube
TARIC8541290000
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor R6012JNXC7G
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity50
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation60 W
USHTS8541290095
DescriptionMOSFET 600V N-CH 12A POWER MOSFET
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time17 ns
Moisture Sensitivity Level1 (Unlimited)