参数项参数值
参数项参数值
Forward Transconductance - Min12.2 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage5.6 V
TechnologySiC
Id - Continuous Drain Current93 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 4 V, + 22 V
Typical Turn-On Delay Time25 ns
Rds On - Drain-Source Resistance22 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time61 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge133 nC
Package / CaseTO-247-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
PackagingTube
BrandROHM Semiconductor
CNHTS8541290000
ManufacturerROHM Semiconductor
Factory Pack Quantity450
Product TypeMOSFET
Product CategoryMOSFET
SeriesSCT3x
TARIC8541290000
Channel ModeEnhancement
RoHS Details
Fall Time35 ns
ImageROHM Semiconductor SCT3022ALGC11
DescriptionMOSFET N-Ch 650V SiC 93A 22mOhm TrenchMOS
SubcategoryMOSFETs
Unit Weight0.211644 oz
USHTS8541290095
Part # AliasesSCT3022AL
Pd - Power Dissipation339 W
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel
Rise Time53 ns
Moisture Sensitivity Level1 (Unlimited)