参数项参数值
参数项参数值
ConfigurationSingle
ImageROHM Semiconductor SCT3030KLHRC11
DescriptionMOSFET 1200V 72A 339W SIC 30mOhm TO-247N
Forward Transconductance - Min10.8 S
Vgs th - Gate-Source Threshold Voltage2.7 V
TechnologySiC
Transistor PolarityN-Channel
Id - Continuous Drain Current72 A
Vgs - Gate-Source Voltage- 4 V, + 22 V
QualificationAEC-Q101
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time24 ns
Rds On - Drain-Source Resistance30 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time61 ns
PackagingTube
Package / CaseTO-247-3
Product CategoryMOSFET
Factory Pack Quantity30
Maximum Operating Temperature+ 175 C
Mounting StyleThrough Hole
Product TypeMOSFET
BrandROHM Semiconductor
RoHS Details
ManufacturerROHM Semiconductor
Qg - Gate Charge131 nC
TARIC8541290000
SeriesSCT3x
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time29 ns
Unit Weight0.260886 oz
CNHTS8541290000
Pd - Power Dissipation339 W
Vds - Drain-Source Breakdown Voltage1200 V
Number of Channels1 Channel
Rise Time42 ns
Moisture Sensitivity Level1 (Unlimited)