参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min3.4 S
Vgs th - Gate-Source Threshold Voltage2.7 V
TechnologySiC
Transistor PolarityN-Channel
Id - Continuous Drain Current24 A
ImageROHM Semiconductor SCT3105KLGC11
Minimum Operating Temperature- 55 C
Vgs - Gate-Source Voltage- 4 V, + 22 V
DescriptionMOSFET Nch 1200V 24A SiC TO-247N
Typical Turn-On Delay Time17 ns
Rds On - Drain-Source Resistance105 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time31 ns
PackagingTube
Package / CaseTO-247-3
Maximum Operating Temperature+ 175 C
Product CategoryMOSFET
Factory Pack Quantity30
Mounting StyleThrough Hole
Product TypeMOSFET
BrandROHM Semiconductor
SeriesSCT3x
ManufacturerROHM Semiconductor
TARIC8541290000
Qg - Gate Charge51 nC
RoHS Details
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time17 ns
Vds - Drain-Source Breakdown Voltage1200 V
Number of Channels1 Channel
Rise Time27 ns