RSJ250P10TL

厂牌:ROHM
包装:REEL 1000
类目:元器件 > 分立器件 > MOSFET
编号:B000044474582
描述:Power Field-Effect Transistor, 25A I(D), 100V, 0.063ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
最新价格近期成交45单+
数量价格(含税)
1¥27.3733
100¥18.8831
500¥17.0534
1000¥14.2722
2000¥13.1743
5000¥11.4177
10000¥10.6857
库存:1,000交期:5-10个工作日起订:10增量:1
数量:
X
27.3733(单价)
合计:
¥273.73
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current25 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time30 ns
Rds On - Drain-Source Resistance45 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time310 ns
MXHTS85412999
Qg - Gate Charge60 nC
KRHTS8541299000
Package / CaseTO-263-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
CNHTS8541290000
Fall Time180 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.122848 oz
ImageROHM Semiconductor RSJ250P10TL
SeriesRSJ250P10
BrandROHM Semiconductor
Pd - Power Dissipation50 W
Factory Pack Quantity1000
Part # AliasesRSJ250P10
Product TypeMOSFET
ManufacturerROHM Semiconductor
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET PWR MOSFET LOW RESIST DEVICE
Vds - Drain-Source Breakdown Voltage100 V
USHTS8541290095
Number of Channels1 Channel
Rise Time67 ns