参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current25 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time30 ns
Rds On - Drain-Source Resistance45 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time310 ns
MXHTS85412999
Qg - Gate Charge60 nC
KRHTS8541299000
Package / CaseTO-263-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
CNHTS8541290000
Fall Time180 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.122848 oz
ImageROHM Semiconductor RSJ250P10TL
SeriesRSJ250P10
BrandROHM Semiconductor
Pd - Power Dissipation50 W
Factory Pack Quantity1000
Part # AliasesRSJ250P10
Product TypeMOSFET
ManufacturerROHM Semiconductor
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET PWR MOSFET LOW RESIST DEVICE
Vds - Drain-Source Breakdown Voltage100 V
USHTS8541290095
Number of Channels1 Channel
Rise Time67 ns