参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Id - Continuous Drain Current2.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time9 ns
Rds On - Drain-Source Resistance61 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time130 ns
Qg - Gate Charge13 nC
Package / CaseSOT-346-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time85 ns
TARIC8541290000
PackagingCut Tape
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RQ5A025ZPTL
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation1 W
Part # AliasesRQ5A025ZP
USHTS8541210095
DescriptionMOSFET -12V P-CHANNEL -2.5A
Vds - Drain-Source Breakdown Voltage12 V
Number of Channels1 Channel
Rise Time35 ns