参数项参数值
参数项参数值
Forward Transconductance - Min7 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Id - Continuous Drain Current7.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time15 ns
Rds On - Drain-Source Resistance40 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time100 ns
Width2.4 mm
Height0.85 mm
Length3 mm
MXHTS85412999
Qg - Gate Charge18 nC
KRHTS8541299000
Package / CaseTSMT-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
ProductMOSFET
CNHTS8541290000
Channel ModeEnhancement
Fall Time85 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageROHM Semiconductor RQ1C075UNTR
BrandROHM Semiconductor
Pd - Power Dissipation1.5 W
Factory Pack Quantity3000
Product TypeMOSFET
Part # AliasesRQ1C075UN
ManufacturerROHM Semiconductor
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET 1.5V Drive Nch MOSFET
Vds - Drain-Source Breakdown Voltage20 V
USHTS8541290095
Number of Channels1 Channel
Rise Time50 ns
TypePower MOSFET