参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time8 ns
Width1.6 mm
Height0.85 mm
Rds On - Drain-Source Resistance110 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time21 ns
Length2.9 mm
Qg - Gate Charge3.9 nC
Mounting StyleSMD/SMT
Package / CaseTSMT-5
Minimum Operating Temperature- 50 C
Maximum Operating Temperature+ 150 C
ProductMOSFET Small Signal
ImageROHM Semiconductor QS5U13TR
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Channel ModeEnhancement
Fall Time10 ns
Factory Pack Quantity3000
SeriesQS5U13
SubcategoryMOSFETs
Product CategoryMOSFET
BrandROHM Semiconductor
Unit Weight0.000494 oz
DescriptionMOSFET N-CH 30V 2A TSMT5
ManufacturerROHM Semiconductor
Product TypeMOSFET
Part # AliasesQS5U13
Pd - Power Dissipation900 mW
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time10 ns
TypeMOSFET