参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current1.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6 ns
Rds On - Drain-Source Resistance290 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15 ns
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge2 nC
JPHTS8541290100
CAHTS8541290000
Package / CaseSOT-323-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageROHM Semiconductor RSF015N06TL
Channel ModeEnhancement
SeriesRSF015N06
SubcategoryMOSFETs
Fall Time10 ns
BrandROHM Semiconductor
Factory Pack Quantity3000
Unit Weight0.001075 oz
Product CategoryMOSFET
Product TypeMOSFET
ManufacturerROHM Semiconductor
DescriptionMOSFET 4V Drive Nch MOSFET Drive Nch
USHTS8541290095
Pd - Power Dissipation800 mW
Part # AliasesRSF015N06
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time9 ns