参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Id - Continuous Drain Current8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time20 ns
Transistor Type1 N-Channel
Typical Turn-Off Delay Time65 ns
Qg - Gate Charge16.2 nC
Package / CaseSOT-457-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time22 ns
TARIC8541290000
PackagingReel
PackagingCut Tape
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RQ6E080AJTCR
Product CategoryMOSFET
Unit Weight0.003446 oz
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation1.25 W
Part # AliasesRQ6E080AJ
USHTS8541290095
DescriptionMOSFET 30V N-CHANNEL 8A
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time16 ns