参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Id - Continuous Drain Current1.5 A
Transistor PolarityN-Channel, P-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time7 ns, 10 ns
Width1.6 mm
Height0.85 mm
Rds On - Drain-Source Resistance260 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time15 ns, 45 ns
Length2.9 mm
Mounting StyleSMD/SMT
Qg - Gate Charge1.6 nC, 3 nC
Package / CaseSOT-457-6
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ProductMOSFET Small Signal
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity3000
Fall Time18 ns, 12 ns
SeriesQS6M4
SubcategoryMOSFETs
BrandROHM Semiconductor
Product CategoryMOSFET
Unit Weight0.000494 oz
DescriptionMOSFET N+P 30 20V 1.5A TSMT6
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1.25 W
Part # AliasesQS6M4
Number of Channels2 Channel
Rise Time18 ns, 12 ns
TypeMOSFET