参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Id - Continuous Drain Current1 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time7 ns
Width1.6 mm
Height0.85 mm
Rds On - Drain-Source Resistance260 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time15 ns
Length2.9 mm
Qg - Gate Charge2.4 nC
Mounting StyleSMD/SMT
Package / CaseSOT-457-6
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ProductMOSFET Small Signal
ImageROHM Semiconductor QS6K1TR
PackagingMouseReel
PackagingReel
PackagingCut Tape
RoHS Details
Channel ModeEnhancement
Fall Time7 ns
Factory Pack Quantity3000
SeriesQS6K1
SubcategoryMOSFETs
Product CategoryMOSFET
BrandROHM Semiconductor
DescriptionMOSFET 2N-CH 30V 1A TSMT6
ManufacturerROHM Semiconductor
Product TypeMOSFET
Part # AliasesQS6K1
Pd - Power Dissipation1.25 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time7 ns
TypeMOSFET