参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current12.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance7.5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time55 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge12.7 nC
Mounting StyleSMD/SMT
Package / CaseSOP-8
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
CNHTS8541290000
BrandROHM Semiconductor
Factory Pack Quantity2500
ManufacturerROHM Semiconductor
Channel ModeEnhancement
SeriesRXH125N03
TARIC8541290000
RoHS Details
Product CategoryMOSFET
DescriptionMOSFET RECOMMENDED ALT 755-RS3E135BNGZETB
ImageROHM Semiconductor RXH125N03TB1
Fall Time18 ns
Product TypeMOSFET
SubcategoryMOSFETs
USHTS8541290095
Pd - Power Dissipation2 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time20 ns
Moisture Sensitivity Level1 (Unlimited)