在线商城 
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time11 ns
Rds On - Drain-Source Resistance180 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time21 ns
Qg - Gate Charge2.9 nC
Package / CaseSOT-346-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time11 ns
PackagingCut Tape
PackagingReel
TARIC8541290000
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RQ5H020TNTL
Product CategoryMOSFET
Unit Weight0.001093 oz
Factory Pack Quantity3000
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1 W
Part # AliasesRQ5H020TN
USHTS8541210095
DescriptionMOSFET 45V N-CHANNEL 2A
Vds - Drain-Source Breakdown Voltage45 V
Number of Channels1 Channel
Rise Time16 ns