参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current33 A
Vgs - Gate-Source Voltage- 30 V, + 30 V
Rds On - Drain-Source Resistance105 mOhms
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge80 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingBulk
Factory Pack Quantity500
CNHTS8541290000
BrandROHM Semiconductor
Product TypeMOSFET
Channel ModeEnhancement
ImageROHM Semiconductor RCX330N25
SeriesRCX330N25
ManufacturerROHM Semiconductor
TARIC8541290000
Product CategoryMOSFET
RoHS Details
Unit Weight0.211644 oz
SubcategoryMOSFETs
Pd - Power Dissipation40 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage250 V
Number of Channels1 Channel