RUF025N02TL

厂牌:ROHM
包装:REEL 3000
类目:元器件 > 分立器件 > MOSFET
编号:B000044474992
描述:Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
最新价格近期成交19单+
数量价格(含税)
1¥7.9778
100¥4.7574
500¥4.2451
1000¥3.8060
3000¥3.2204
6000¥2.9275
15000¥2.5617
库存:3,000交期:5-10个工作日起订:10增量:1
数量:
X
7.9778(单价)
合计:
¥79.78
商品满500包邮
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min3.6 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current2.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time7 ns
Width1.7 mm
Rds On - Drain-Source Resistance39 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time35 ns
Length2 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge5 nC
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
ProductMOSFET Small Signal
CNHTS8541210000
Factory Pack Quantity3000
BrandROHM Semiconductor
SeriesRUF025N02
Channel ModeEnhancement
Product TypeMOSFET
DescriptionMOSFET Med Pwr, Sw MOSFET N Chan, 20V, 2A
ManufacturerROHM Semiconductor
TARIC8541290000
ImageROHM Semiconductor RUF025N02TL
Product CategoryMOSFET
Fall Time15 ns
RoHS Details
Unit Weight0.116968 oz
SubcategoryMOSFETs
Part # AliasesRUF025N02
Pd - Power Dissipation800 mW
USHTS8541290095
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time15 ns