参数项参数值
参数项参数值
Forward Transconductance - Min3.6 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current2.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time7 ns
Width1.7 mm
Rds On - Drain-Source Resistance39 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time35 ns
Length2 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge5 nC
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
ProductMOSFET Small Signal
CNHTS8541210000
Factory Pack Quantity3000
BrandROHM Semiconductor
SeriesRUF025N02
Channel ModeEnhancement
Product TypeMOSFET
DescriptionMOSFET Med Pwr, Sw MOSFET N Chan, 20V, 2A
ManufacturerROHM Semiconductor
TARIC8541290000
ImageROHM Semiconductor RUF025N02TL
Product CategoryMOSFET
Fall Time15 ns
RoHS Details
Unit Weight0.116968 oz
SubcategoryMOSFETs
Part # AliasesRUF025N02
Pd - Power Dissipation800 mW
USHTS8541290095
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time15 ns