参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current250 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time3.5 ns
Rds On - Drain-Source Resistance1.7 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time18 ns
MXHTS85423901
CNHTS8541210000
Qg - Gate Charge-
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8542390000
Channel ModeEnhancement
Fall Time28 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RK7002BMHZGT116
Unit Weight0.001288 oz
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation350 mW
Part # AliasesRK7002BMHZG
USHTS8542390001
DescriptionMOSFET Nch 60V Vds 0.25A 3Rds(on) SOT-23
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time5 ns
Moisture Sensitivity Level1 (Unlimited)