参数项参数值
参数项参数值
Forward Transconductance - Min1.2 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 2 V
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
QualificationAEC-Q101
Typical Turn-On Delay Time11 ns
Rds On - Drain-Source Resistance135 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time38 ns
CNHTS8541290000
Qg - Gate Charge4.9 nC
Package / CaseSC-96-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time12 ns
TARIC8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RTR020P02HZGTL
Product CategoryMOSFET
Unit Weight0.006448 oz
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1 W
USHTS8541290095
DescriptionMOSFET -20V P-CHANNEL -2A
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time13 ns