SCT3120ALGC11

厂牌：ROHM

包装：TUBE 450

类目：元器件 > 分立器件 > MOSFET

编号：B000044475141

描述：SCT3120AL Series 650 V 21 A 156 mOhm N-Channel SiC Power Mosfet - TO-247N

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商品参数

参数项参数值

ConfigurationSingle

Forward Transconductance - Min2.7 S

TechnologySiC

Vgs th - Gate-Source Threshold Voltage2.7 V

Transistor PolarityN-Channel

Id - Continuous Drain Current21 A

KRHTS8541299000

Vgs - Gate-Source Voltage- 4 V, + 22 V

Minimum Operating Temperature- 55 C

JPHTS8541290100

CAHTS8541290000

Typical Turn-On Delay Time14 ns

Rds On - Drain-Source Resistance120 mOhms

Transistor Type1 N-Channel

Maximum Operating Temperature+ 175 C

Typical Turn-Off Delay Time23 ns

ImageROHM Semiconductor SCT3120ALGC11

Package / CaseTO-247-3

PackagingTube

BrandROHM Semiconductor

SubcategoryMOSFETs

Product CategoryMOSFET

Mounting StyleThrough Hole

TARIC8541290000

DescriptionMOSFET N-Ch 650V SiC 21A 120mOhm TrenchMOS

ManufacturerROHM Semiconductor

Factory Pack Quantity450

Qg - Gate Charge38 nC

RoHS Details

MXHTS85412999

SeriesSCT3x

Product TypeMOSFET

USHTS8541290095

Channel ModeEnhancement

Fall Time14 ns

Unit Weight0.211644 oz

CNHTS8541290000

Part # AliasesSCT3120AL

Pd - Power Dissipation103 W

Vds - Drain-Source Breakdown Voltage650 V

Number of Channels1 Channel

Rise Time21 ns