RGW60TK65GVC11

厂牌:ROHM
包装:TUBE 450
类目:元器件 > 分立器件 > IGBT晶体管
编号:B000044475185
描述:IGBT SINGLE 650V 33A TO-3PFM; DC Collector Current:33A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:72W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3PFM; No. of Pins:3Pins; Operating Temperature Max:175蚓; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018)
最新价格近期成交29单+
数量价格(含税)
1¥54.3075
100¥38.9374
450¥32.4234
900¥30.0083
2250¥25.9828
4500¥24.2992
库存:150交期:5-10个工作日起订:1增量:1
数量:
X
54.3075(单价)
合计:
¥54.31
商品满500包邮
商品参数
参数项参数值
参数项参数值
Gate-Emitter Leakage Current200 nA
Collector- Emitter Voltage VCEO Max650 V
ConfigurationSingle
TechnologySi
Maximum Gate Emitter Voltage30 V
Collector-Emitter Saturation Voltage1.5 V
Minimum Operating Temperature- 40 C
Mounting StyleThrough Hole
Package / CaseTO-3PFM
Maximum Operating Temperature+ 175 C
ImageROHM Semiconductor RGW60TK65GVC11
TARIC8541290000
PackagingTube
RoHS Details
SubcategoryIGBTs
Factory Pack Quantity1
Product CategoryIGBT Transistors
BrandROHM Semiconductor
Product TypeIGBT Transistors
DescriptionIGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT
ManufacturerROHM Semiconductor
USHTS8541290095
Continuous Collector Current at 25 C33 A
Pd - Power Dissipation72 W
Continuous Collector Current Ic Max33 A