参数项参数值
参数项参数值
Forward Transconductance - Min8.3 S
ConfigurationSingle
TechnologySiC
Vgs th - Gate-Source Threshold Voltage2.7 V
Transistor PolarityN-Channel
Id - Continuous Drain Current55 A
Vgs - Gate-Source Voltage- 4 V, + 22 V
KRHTS8541299000
Typical Turn-On Delay Time21 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
RoHS Details
Rds On - Drain-Source Resistance40 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time49 ns
Package / CaseTO-247-3
Factory Pack Quantity450
BrandROHM Semiconductor
ImageROHM Semiconductor SCT3040KLGC11
TARIC8541290000
Mounting StyleThrough Hole
PackagingTube
ManufacturerROHM Semiconductor
Maximum Operating Temperature+ 175 C
Product CategoryMOSFET
SubcategoryMOSFETs
Qg - Gate Charge107 nC
DescriptionMOSFET N-Ch 1200V SiC 55A 40mOhm TrenchMOS
MXHTS85412999
Product TypeMOSFET
SeriesSCT3x
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.211644 oz
Fall Time24 ns
CNHTS8541290000
Part # AliasesSCT3040KL
Pd - Power Dissipation262 W
Vds - Drain-Source Breakdown Voltage1200 V
Number of Channels1 Channel
Rise Time39 ns